hexfet ? power mosfet 4/9/01 irf7755 absolute maximum ratings www.irf.com 1 thermal resistance parameter max. units v ds drain-source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -3.9 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.1 a i dm pulsed drain current ? -15 p d @t a = 25c maximum power dissipation ? 1w p d @t a = 70c maximum power dissipation ? 0.64 w linear derating factor 0. 01 w/c v gs gate-to-source voltage 20 v t j , t stg junction and storage temperature range -55 to +150 c pd -93995a v dss r ds(on) max i d -20v 51m w @v gs = -4.5v - 3.7a 86m w @v gs = -2.5v - 2.8a parameter max. units r q ja maximum junction-to-ambient ? 125 c/w tssop-8 description l ultra low on-resistance l dual p-channel mosfet l very small soic package l low profile (< 1.2mm) l available in tape & reel hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design, that inter- national rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. the tssop-8 package has 45% less footprint area than the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and pcmcia cards. 4 = g1 3 = s1 2 = s1 1 = d1 1 2 3 4 5 6 7 8 5 = g2 6 = s2 7 = s2 8 = d2
irf7755 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.0a, v gs = 0v ? t rr reverse recovery time CCC 55 82 ns t j = 25c, i f = -1.0a q rr reverse recovery charge CCC 29 43 nc di/dt = -100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -15 -1.0 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.011 CCC v/c reference to 25c, i d = -1ma CCC 35.3 51 v gs = -4.5v, i d = -3.7a ? CCC 44.3 86 v gs = -2.5v, i d = -2.8a ? v gs(th) gate threshold voltage -0.45 CCC -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 7.0 CCC CCC s v ds = -10v, i d = -3.7a CCC CCC -15 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 11 17 i d = -3.7a q gs gate-to-source charge CCC 2.1 CCC nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 3.5 CCC v gs = -4.5v t d(on) turn-on delay time CCC 9 14 v dd = -10v, v gs = -4.5v t r rise time CCC 13 20 i d = -1.0a t d(off) turn-off delay time CCC 89 133 r g = 6.0 w t f fall time CCC 61 92 r d = 10 w ? c iss input capacitance CCC 1090 CCC v gs = 0v c oss output capacitance CCC 182 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 124 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns notes: ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 300s; duty cycle 2%. ? when mounted on 1 inch square copper board, t < 10sec. s d g
irf7755 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) -1.5v 20s pulse width tj = 25c vgs top -7.5v -4.5v -3.5v -3.0v -2.5v -2.0v -1.75v bottom -1.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 -i d , drain-to-source current (a) -1.5v 20s pulse width tj = 150c vgs top -7.5v -4.5v -3.5v -3.0v -2.5v -2.0v -1.75v bottom -1.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -3.9a 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf7755 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.7a v = -16v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 0 400 800 1200 1600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
irf7755 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit
irf7755 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge 10 v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -v gs, gate -to -source voltage (v) 0.000 0.040 0.080 0.120 0.160 r ds(on) , drain-to -source on resistance ( w ) i d = -3.7a 0 5 10 15 -i d , drain current ( a ) 0.000 0.050 0.100 0.150 0.200 r ds ( on ) , drain-to-source on resistance ( w ) vgs = -2.5v vgs = -4.5v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + -
irf7755 www.irf.com 7 example: t his is an irf7702 dat e code (yw) part number lot code (xx) date code examples: 9503 = 5c 9532 = ef 7702 xxyw work week 27-52, alphanumeric year code (a,b, ...etc.) 2000 k 52 51 50 z y x 2001 1995 1999 1998 1997 1996 1994 2003 2002 ye ar aa 27 e h g f j d c b 30 29 28 d c b table 2 y wor k we e k 26 w z work week 1-26, numeric year code (1,2, ....et c.) 2003 1997 2000 1998 1999 1996 1995 1994 2002 2001 ye ar 3c 03 7 8 9 0 25 24 5 6 404 y x d wor k 2 1 yweek 02 01 table 1 b a w tssop-8 part marking information ? 13" 16mm 1. t ape & reel ou t line conf orms t o e ia-481 & e ia-541. not e s : 16 mm 8 mm feed direction 8lt s s op (mo-153aa) tssop-8 tape and reel
irf7755 8 www.irf.com tssop-8 package outline data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 4/01
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